Work

6-Inch GaN/Si CMOS 1P2M Monolithic Heterogeneous Process and Platformed Devices

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835261

Authors: Wen-Zhang Du, Han-Zhao He, Wen-Qi Fan, Zhuang Wang, Xiao-Dong Yang, Jiao Liang, Qing-Chun Zhang, Hong-Ping Ma, Wang Ma, Li Yuan, Jia-Wan Zhou, Tao Wang, Shu-Jun Cai, Cheng Qian, Guang-Sheng Zhang, Xiao-Jun Fu, Hong Zhou, Hai-Ou Li, Hong-Qiang Yang, Jun-Ji Cheng, Liang Li, Wei Huang, D.W. Zhang

Institutions: Fudan University, Xidian University, Guilin University of Electronic Technology, University of Electronic Science and Technology of China, Suzhou Vocational University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460465

FWCI: 1.16

Cites: 14

Cited by: 1

Related to: 10