Work

Pre-Stress-Free Pulsed Test on Dynamic On-Resistance of High-Voltage Recessed-Gate Enhancement-Mode GaN HEMTs

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835378

Authors: Jiayu Zhang, Xu Wang, Nan Sun, Xinyang Wang, KaiMing Ma, Yun Lei, Ronghua Wang, Huolin Huang

Institution: Dalian University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

Awards: G6240759899, 氮化镓自支撑衬底大功率垂直结构场效应晶体管基础技术研究

OpenAlex ID: W4406460472

FWCI: 1.208

Cites: 9

Cited by: 1

Related to: 10