Work

5kV SiC Lateral RESURF MOSFET Charge-Modulated by Multiple P-Islands with Ohmic Contacts for Improved Dynamic Performance

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835365

Authors: Qianqian Que, Ce Wang, Hengyu Wang, Kuang Sheng

Institution: Zhejiang University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G5943509576

OpenAlex ID: W4406460487

FWCI:

Cites: 12

Cited by:

Related to: 10