Work

Investigation of Kink Effect in Quasi-Vertical GaN PiN Diodes on Sapphire

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835366

Authors: Haowen Luo, Han Lin, Renqiang Zhu, Kei May Lau, Huaxing Jiang

Institutions: South China University of Technology, Hong Kong University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Applied Basic Research Foundation of Yunnan Province, Fundamental Research Funds for the Central Universities

Awards: G2819242443, G8925312558

OpenAlex ID: W4406460542

FWCI:

Cites: 7

Cited by:

Related to: 10