Work

Research Progress of Ga2O3 Gate Oxide Dielectrics

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835386

Authors: Yi Shen, Xin Qi, Lin Gu, Yang-Chao Liu, Qing-Chun Zhang, Hong-Ping Ma

Institution: Fudan University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460573

FWCI:

Cites: 19

Cited by:

Related to: 10