Work

High-Quality AlN/Al2O3 Dielectric in AlGaN/GaN MIS-HEMTs

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835294

Authors: Xuanming Zhang, Ye Liang, Yuanlei Zhang, Hao Tian, Jiachen Duan, Jiangmin Gu, Wenqing Liu, Wen Liu

Institutions: Xi’an Jiaotong-Liverpool University, University of Liverpool

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460578

FWCI: 2.318

Cites: 10

Cited by: 2

Related to: 10