Artificial Neural Network-Based (ANN) Physical Model for GaN HEMTs Based on Terminal Charge
Year: 2024
Type: conference-paper
Authors: Jingyun Guan, Wen Yang
Institution: South China University of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G5478211336, G8008164977
OpenAlex ID: W4406460606