A Novel Trench-Gate MOSFET with Sidewall N+ Region and Low Switching Loss
Year: 2024
Type: conference-paper
Authors: Xinya Zhao, Na Ren, Kuang Sheng
Institution: Zhejiang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4406460622