Work

A Monolithically Integrated 3-Transistor Voltage Reference Generator Based on p-GaN HEMT Technology

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835326

Authors: Pingyu Cao, Yihao Xu, Kepeng Zhao, Harm Van Zalinge, Ping Zhang, Miao Cui, Fei Xue

Institutions: Xi’an Jiaotong-Liverpool University, University of Liverpool

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460630

FWCI:

Cites: 10

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Related to: 10