Impact of Carbon Implantation and Post-Annealing on Deep Level Defects and Carrier Lifetimes in n-Type 4H-SiC Epilayers
Year: 2024
Type: conference-paper
Authors: Guoguo Yan, Xingfang Liu, Wanshun Zhao, Lei Wang, Zhen Fu, Quan Zhang, Chao Xiao, Qiang Yin, Guosheng Sun, Yiping Zeng
Institutions: Chinese Academy of Sciences, Institute of Semiconductors
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4406460752