Work

A Novel Monolithic Integration of Light-Emitting HEMT with InGaN Quantum Well Insertion Performing as Optoelectronic Devices

Year: 2024

Type: conference-paper

DOI: 10.1109/sslchinaifws64644.2024.10835297

Authors: Jijun Zhu, Hanlin Yang, Haoyu Wang, Yangyang Hu, Luqiao Yin, Jianhua Zhang, Kailin Ren

Institution: Shanghai University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406460754

FWCI:

Cites: 12

Cited by:

Related to: 10