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Electron Mobility Estimate in GaN MOSFETs

Year: 2024

Type: article

Abstract: In this research article, estimation of electron mobility is made in GaN n-channel MOSFETs. The technology for GaN MOSFETs is at an infant stage and an early prediction enables technology development. The electron mobility in a Si (100) n-channel MOSFET is also made that vouches for the simple formula developed for the electron mobility estimation, though the long-channel Si MOSFET technology is now of the past.

Source: Applied sciences research periodicals.

DOI: 10.63002/asrp.210.745

Author: Ravi Kumar Chanana

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W4406472743

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