Multiparameter Admittance Spectroscopy for Investigating Defects in MoS₂ Thin-Film MOSFETs
Year: 2025
Type: article
Abstract: We present a method for assessing the quality of electronic material properties of thin-film metal–oxide–semiconductor field-effect transistors (MOSFETs). By investigating samples with metal-organic-chemical-vapor-deposition (MOCVD)-grown molybdenum disulfide (MoS2) channels exposed to atmospheric conditions, we reveal the existence of electron traps in MoS2 and at the interface between the gate insulator and the thin-film MoS2. Differential conductance and capacitance data of the transistor channels are plotted as 3-D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model.
Institutions: RWTH Aachen University, AMO (Germany), Aixtron (Germany)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,645
Funder: Deutsche Forschungsgemeinschaft
OpenAlex ID: W4406525069