Work

Transient currents produced by mobile ions in thick Metal-Semiconductor-Metal devices

Year: 2024

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Kopprio, Leonardo, Le Gall, Sylvain, Brézard-Oudot, Aurore, Ahanogbe, Koffi, Lopez-Varo, Pilar, Mallik, Nitin, Ceratti, Davide Raffaele, Alvarez, J, Longeaud, Christophe, Kleider, Jean-Paul, Almora, Osbel

Institutions: Université Paris-Saclay, Laboratoire de Génie Électrique et Électronique de Paris, Institut Photovoltaïque d’Île-de-France, Universitat Rovira i Virgili

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406601118

FWCI:

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Related to: 10