Work

Monolithic Bidirectional GaN-on-GaN Vertical Transistor Technologies: Exploring Bidirectional CAVET for Next-Generation Switching Applications with Symmetrical Power Control

Year: 2024

Type: article

Source: IEEE Electron Devices Magazine

DOI: 10.1109/med.2024.3451353

Authors: Xinyi Wen, Hayao Kasai, Maliha Noshin, Chuanzhe Meng, Srabanti Chowdhury

Institution: Stanford University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406611416

FWCI: 1.486

Cites: 18

Cited by: 10

Related to: 10