Work

Reducing Crosstalk of SiC MOSFET Gate Driver using a Negative Driving Voltage

Year: 2024

Type: conference-paper

Source: Electrical Power, Electronics, Communications, Controls and Informatics Seminar (EECCIS)

DOI: 10.1109/eeccis62037.2024.10839794

Authors: Intan Anggraeni Maryanda Putri, Waru Djuriatno, Tri Nurwati, Soltana Guesmi

Institutions: University of Brawijaya, University of Sfax

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Universitas Brawijaya

OpenAlex ID: W4406612134

FWCI: 0.806

Cites: 10

Cited by: 1

Related to: 10