Work

1200V Series-Connected GAN-IGBT Hybrid Switch with Single Gate Driver

Year: 2024

Type: conference-paper

Abstract: GaN FETs offer higher switching speeds and lower gate drive losses compared to IGBTs. Their low parasitic capacitance allows for achieving higher switching frequencies. Due to the limited Vds voltage of GaN FETs, they must be connected in series for high-voltage power conversion applications, necessitating voltage balancing. This study proposes a gate driving scheme and circuitry to control an 800V / 16A hybrid switch using a single gate driver while balancing voltage across the series-connected GaN FETs. As a result of using the hybrid configuration, conduction loss on GaN FETs has been reduced by 70.7%, and the cost of the switching unit has decreased significantly, making it an alternative low-switching loss and high power switching unit.

DOI: 10.1109/eleco64362.2024.10847125

Authors: Ömer Faruk GÖKSU, Mehmet Onur GÜLBAHÇE, Serkan DÜŞMEZ

Institutions: Fatih Sultan Mehmet Waqf University, Huawei Technologies (Germany)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: green

OpenAlex ID: W4406728262

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