Work

Impact of Gate Oxide Thickness Variation on the On-state Safe Operating Area and FoM of SOI-Junctionless FinFET considering the Self-heating Effects

Year: 2024

Type: conference-paper

Source: International Conference on Advances in Computing and Communications (ICACC)

DOI: 10.1109/icacc63692.2024.10845422

Authors: Vinaya S J, K. S. Nikhil

Institution: National Institute of Technology Karnataka

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406729879

FWCI:

Cites: 13

Cited by:

Related to: 10