Work

Ultra-Low Phase Noise NMOS and PMOS Colpitts Oscillators Using BAW Resonator Comparison

Year: 2024

Type: conference-paper

Abstract: This paper introduces a complete comparison between NMOS and PMOS differential Colpitts oscillators in a 28 nm CMOS technology and using a BAW resonator. A gm-boosting technique is implemented to enhance negative resistance and alleviate start-up constraints.$g_{m}/I_{D}$ratio is the main used design methodology, and a direct relation with noise is demonstrated. Both oscillators present a frequency around 4.2 GHz with an ultra-low phase noise performance of -149 and - 52 dBc/Hz at 1 MHz offset for the NMOS and PMOS topologies, respectively.

Source: IEEE International Conference on Electronics, Circuits and Systems (ICECS)

DOI: 10.1109/icecs61496.2024.10848875

Authors: Estevan Chia Hung Tu, Jean-Baptiste Begueret, Stephane Thuries, Emmanuel Pistono, Florence Podevin, Sylvain Bourdel

Institutions: Centre National de la Recherche Scientifique, Université de Bordeaux, NXP (France), Institut polytechnique de Grenoble, Techniques of Informatics and Microelectronics for Integrated Systems Architecture

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4406744216

FWCI: 1.605

Cites:

Cited by: 2

Related to: 10