Work

A Scalable Model for GaN HEMTs with Trapping and Self-Heating Effects Characterization

Year: 2024

Type: conference-paper

DOI: 10.1109/iccs62517.2024.10846105

Authors: Jinchi Bi, Chunyu Li, Tiancheng Zhang, Zuyin Xu, Aiqiang Cheng, Huaguang Bao, Dazhi Ding

Institution: Nanjing University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4406754128

FWCI:

Cites: 11

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Related to: 10