Effect of Buried depth, Thickness of Channel and Gate length on Breakdown Voltage in AlGaN/GaN HEMT
Year: 2024
Type: conference-paper
Authors: Anil Prasad Dadi, Ellapu Bhanu Prakash, Vijay Maitra, Ashok Ray, Sushanta Bordoloi
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4406754664