Work

Role of Cd interstitial in group-V doped CdTe

Year: 2024

Type: conference-paper

Abstract: ☼ Cadmium Telluride is a key material for thin-film photovoltaic technology ☼ The current record efficiency of 22.6% is well below the theoretical limit of 33%, suggesting there is plenty of room for improvement ☼ Increasing hole concentration in the p-type CdTe absorber layer is key to improving efficiency ☼ Group-V (gV) dopants, P, As, and Sb are shallow acceptors, but show low doping efficiencies ☼ The causes of such low doping efficiencies remain the subject of intense debate This work was supported by the EERE Solar Energy Technologies Office grant number DE-EE0009344 and used resources of the

DOI: 10.2172/2504219

Authors: Intuon Chatratin, Igor Evangelista, Anderson Janotti

Institution: University of Delaware

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Funders: U.S. Department of Energy, National Energy Research Scientific Computing Center, Office of Energy Efficiency and Renewable Energy

Award: IN-SITU ANTIMONY DOPED POLYCRYSTALLINE CDTE FILMS FOR SIMPLIFIED CELL PROCESSING AND MAXIMIZED ENERGY