Year: 2024
Type: conference-paper
Abstract: Group-V doping can enhance the efficiency of CdTe photovoltaic devices by increasing the open-circuit voltage (Voc), if long lifetimes can be retained and radiative voltage loss can be avoided.In this preliminary study, ex-situ Sb doping via drive-in diffusion improved grain sizes compared to Sb-free films without CdCl 2 treatment.Sb doping did not reduce the carrier lifetime for uniform CdSeTe absorbers.Additionally, the CST-air surface recombination decreased with Sb.No potential fluctuations were observed by PL at this doping level.The [Sb] and carrier concentration for this study are not yet measured so the conclusions drawn are all preliminary.
DOI: 10.2172/2504627
Institutions: Drexel University, University of Delaware
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Funder: U.S. Department of Energy
OpenAlex ID: W4406817034