Year: 2024
Type: conference-paper
Abstract: Methods Conclusions 100 nm Our team has achieved ~20% doping activation of CdSeTe with antimony (Sb), whose shallow acceptor level makes it a viable alternative to As. 1,2 Arsenic (As)-doped graded CdSeTe photovoltaics have achieved record efficiencies of 22.3%.Remaining challenges include doping activation of only ~2% in polycrystalline films and radiative voltage losses of ~100 mV.Here we use (transient) terahertz and photoluminescence spectroscopy of CdTe:Sb and CdSeTe:Sb to show sufficiently long bulk lifetimes to enable high-efficiency devices.Early results also indicate dominant bandgap emission in CdSeTe:Sb and a lack of potential fluctuations with Sb-doping that have proven detrimental for As-doped films.While more work is needed, these results show significant promise for Sb doping.Time-Resolved Terahertz and TRPL provide complementary dynamic information.
DOI: 10.2172/2504631
Institutions: Drexel University, University of Delaware, University of Florida
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Funder: U.S. Department of Energy
OpenAlex ID: W4406859604