Work

Study of p–i–n Diode Structures on High-Resistivity Silicon Substrates Using Deep-Level Transient Spectroscopy

Year: 2024

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782624700039

Authors: T. V. Grigoreva, S. A. Golubkov, A. N. Boiko

Institution: National Research University of Electronic Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406871648

FWCI: 0.48

Cites: 12

Cited by: 3

Related to: 10