Work

Transmission Electron Microscopy Study of the Structure of GaAs Layers in GaAs/Ge/GaAs Heterostructures

Year: 2024

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782624700106

Authors: V. A. Sazonov, N. I. Borgardt, A. S. Prikhodko, I. P. Kazakov, A. V. Klekovkin

Institutions: National Research University of Electronic Technology, P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Russian Academy of Sciences

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406871706

FWCI: 0.164

Cites: 33

Cited by: 1

Related to: 10