Work

Normally off GaN Transistor for a Complementary Pair

Year: 2024

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782624700179

Authors: V. I. Egorkin, O. B. Chukanova

Institution: National Research University of Electronic Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406871935

FWCI: 0.446

Cites: 15

Cited by: 3

Related to: 10