Work

Enhanced Sensitivity in IR GeSn Thin-Film Based Phototransistors by Using a Gaussian Doping Profile

Year: 2024

Type: conference-paper

DOI: 10.1109/ecte-tech62477.2024.10851045

Authors: Asma Dekkiche, Hichem Ferhati, Fayçal Djeffal

Institutions: Larbi Ben M'hidi University of Oum El Bouaghi, University of Batna 1

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4406894437

FWCI:

Cites: 18

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Related to: 10