Work

A Wideband 60–100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver

Year: 2024

Type: conference-paper

Abstract: This paper presents a wideband GaAs low-noise amplifier (LNA) that operates as a pre-amplifier for a CMOS receiver, with a background motivation of a chiplet-level integration. A GaAs pre-amplifier will improve the total gain and noise performance of the receiver. The paper presents a comprehensive analytical method for wideband matching - a design methodology for optimum matching networks. As a result, this LNA features a particularly wide bandwidth from 60 to 100 GHz with an average gain of 15 dB. The LNA was implemented with 0.1-µm GaAs pHEMT technology. The circuit occupies a die area of 1 mm-, noise figure is 7.2-8.5 dB at 60–100 GHz with a gain of 12–21 dB and DC power consumption of 20 mW.

Source: IEEE International Conference on Electronics, Circuits and Systems (ICECS)

DOI: 10.1109/icecs61496.2024.10848860

Authors: Kaisa Ryynänen, Kari Stadius, Jan Bergman, Göksu Kaval, Gregor Lasser, Vessen Vassilev, Christian Fager, Jussi Ryynänen

Institutions: Aalto University, Gotmic (Sweden), Chalmers University of Technology

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4406894564

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