Work

A Novle Junctionless 4H-SiC Trench MOSFET with Improved Switching and Self-Heating Performances

Year: 2024

Type: conference-paper

DOI: 10.1109/ecte-tech62477.2024.10850973

Authors: Badreddine Zerroumda, Faycal Djeffal, Hichem Ferhati Ista

Institutions: University of Batna 2, Larbi Ben M'hidi University of Oum El Bouaghi

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4406894565

FWCI:

Cites: 20

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Related to: 10