Work

Total Ionizing Dose in 130-nm and 55-nm SiGe:C Heterojunction Bipolar Transistors

Year: 2024

Type: conference-paper

Abstract: International audience

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Sagnes, Bruno, Adebabay Belie, A, Pascal, Fabien, Boch, Jérôme, Maraine, Tadec, Hoffmann, Alain, Bouhouche, Menel, Haendler, Sebastien, Chevalier, Pascal, Gloria, Daniel

Institutions: Institut d'Électronique et des Systèmes, STMicroelectronics (France)

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: Université de Montpellier, Région Occitanie Pyrénées-Méditerranée, European Regional Development Fund

OpenAlex ID: W4406920970

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