Work

Multicolor Emission in Indium-Doped Amorphous Boron Nitride Integrated on Silicon for Self-Biased and High-Speed Photodetection

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c17814

Authors: Qiuguo Li, Shijie Xiong, Kaijian Huang, Weiping Gong, Long Wen, Qin Chen, Baojun Li, Xianguang Yang

Institutions: Key Laboratory of Guangdong Province, Huizhou University, Jinan University

Language: English

Topic: Boron and Carbon Nanomaterials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Huizhou University, Fundamental Research Funds for the Central Universities, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G2836370641, G4191674171, G4255350361, G5528097607, G6721142708, G6811787196, G8255753890, G8439455372

OpenAlex ID: W4407084650

FWCI: 0.623

Cites: 49

Cited by: 3

Related to: 10