Work

Electronic properties of metamorphic GaSbBi films on GaAs

Year: 2025

Type: article

Abstract: We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates. The 1 μm thick GaSbBi epilayers exhibit fully relaxed narrow x-ray diffraction peaks and smooth surface morphology comparable to that of high-quality GaSb epilayers on GaAs. Low temperature photoluminescence spectra exhibit bandgap shrinkage consistent with Bi alloying. Electrical Hall measurements indicate a reduction in hole concentration and no change in the hole mobilities with increasing Bi content for the nominally undoped GaSbBi alloy. The residual hole concentration reduces from the 1018 cm−3 level for a reference GaSb sample to the low 1017 cm−3 level with increasing Bi content. Hole mobility values of around 300 cm2/Vs are observed independent of the Bi content. These dependencies are attributed to the Bi surfactant effect and Bi-induced defect formation.

Source: APL Materials

DOI: 10.1063/5.0249137

Authors: Joonas Hilska, Janne Puustinen, Eero Koivusalo, Mircea Guina

Institutions: Tampere University, University of Tampere

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,200

Funder: Academy of Finland