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Strain- and Ar/H2 Annealing-Induced Sulfur Defects in Monolayer MoS2 Probed by Raman Spectroscopy

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Year: 2025
Type: article
Source: The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.5c00296
Authors: Yuxiang Chen, Zhengyue Li, Yinfei Xie, Bo Zou, Yongze Xu, Yu Zhou, Jinfeng Yang, Huarui Sun
Institutions: Harbin Institute of Technology, Ministry of Industry and Information Technology, Shanxi University
Language: English

Topic: 2D Materials and Applications
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Guangdong Province, Science and Technology Planning Project of Shenzhen Municipality, Guangdong Special Support Plan
Awards: G1921032204, G7285923788, G8434045957
OpenAlex ID: W4407120564
FWCI: 2.543
Cites: 35
Cited by: 12
Related to: 10
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