Work

Analytical Modeling of Temperature-Resilient Cylindrical Gate Engineered Ferroelectric Nanowire Field-Effect Transistor

Year: 2025

Type: article

Source: IEEE Transactions on Dielectrics and Electrical Insulation

DOI: 10.1109/tdei.2025.3538754

Authors: Aapurva Kaul, Snehlata Yadav, Sonam Rewari, Deva Nand

Institution: Delhi Technological University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407127041

FWCI: 1.155

Cites: 31

Cited by: 5

Related to: 10