Work

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3539175

Authors: Yijin Guo, Yuan Qin, Ming Xiao, Matthew Porter, Qihao Song, Daniel Popa, Loizos Efthymiou, Kai Cheng, Ivan Kravchenko, Linbo Shao, Han Wang, Florin Udrea, Yuhao Zhang

Institutions: Virginia Tech, Xidian University, Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, University of Hong Kong

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407128478

FWCI: 8.991

Cites: 27

Cited by: 29

Related to: 10