Work

AlScN Ferroelectric Diode Enabled CAM With 4F² Cell Size and Low Thermal Budget (330 °C)

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3538669

Authors: Wenxin Sun, Xiao Kou, Jiuren Zhou, Siying Zheng, Jiawei Li, Danyang Yao, Bochang Li, Tao Wu, Yan Liu, Yue Hao, Genquan Han

Institutions: Xidian University, ShanghaiTech University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China

Awards: G1399855030, G1754546206, G4114439208, G6081603033, G8138466655

OpenAlex ID: W4407128758

FWCI: 0.924

Cites: 29

Cited by: 4

Related to: 10