Work

Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3534174

Authors: Arno Kirchbrücher, Gerrit Lükens, Carsten Beckmann, Jasmin Ehrler, Qi Shu, Jens Wieben, Thorsten Zweipfennig, Holger Kalisch, Andrei Vescan

Institution: RWTH Aachen University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407129156

FWCI:

Cites: 30

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Related to: 10