Work

New Evidence for Nonradiative Recombination Enhanced Defect Reaction Effect at Si-SiO₂ Interface Traps

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3532410

Authors: Huimin Geng, Enhao Guan, Jianqun Yang, Gang Lv, Weiqi Li, Zhongli Liu, Wenzhu Shao, Xingji Li

Institutions: Harbin Institute of Technology, Hunan Agricultural Products (China)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407129190

FWCI: 0.231

Cites: 29

Cited by: 1

Related to: 10