Year: 2024
Type: article
Abstract: This paper explores the diverse applications of Silicon Metal-Oxide-Semiconductor Field-Effect Transistor (Si MOSFET) power switch devices in Class E circuit switching. Class E circuit is known for their exceptional efficiency and adaptability across a wide range of applications. However, the performance of Class E circuit can be significantly affected by parasitic components, particularly parasitic capacitors, which play a crucial role in the operation of the converter. This is because parasitic capacitors in Si MOSFET have the potential to increase switching losses in the power converter circuit by storing and releasing energy during switching transitions and can limit the speed of MOSFET switching. The study has determined that IRF510 combined with the TC 4422 driver achieves an efficiency of 98.21%, making it the most suitable switching device for high-frequency Class E circuit. Therefore, achieving Zero Voltage Switching (ZVS) of a Class E circuit is attainable by carefully selecting the appropriate power switch device and considering the value of parasitic capacitances to mitigate voltage spikes and ringing effects.
Authors: Norezmi Jamal, Syahmi Syafiq Ishak, Aira Zambri, Azuwien Aida Bohari, Shakir Saat, Yusmarnita Yusop, Nurul Fatini Mohd Isa, Md Liton Hossain
Language: English
Topic: Advanced DC-DC Converters
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4407148931