Work

Remarkably High Dielectric Constant and Capacitance Density by Ni/ZrO2/TiN Using Nanosecond Laser and Surface Plasma Effect

Year: 2025

Type: article

Abstract: Rapid thermal annealing (RTA) has been widely used in the process of semiconductor devices. However, the rise time of RTA is limited by millisecond (ms) that is not suitable for advanced nanometre scale electron devices. Using sub-energy bandgap (EG) 532 nm ultra-fast 15 nanosecond (ns) pulsed laser annealing, the record highest high dielectric constant (high-κ) of 67.8 and capacitance density of 75 fF/μm2 at -0.2 V were obtained in Ni/ZrO2/TiN capacitors According to the heat source and diffusion equations, the surface temperature of TiN can be as high as 870 °C at a laser energy density of 16.2 J/cm2, which in turn anneals the ZrO2 material. The record-breaking data are achieved by a new annealing method- the surface plasma effect generated on TiN metal. This is because the 2.3 eV (532 nm) pulsed laser energy is far below the 5.0~5.8 eV energy bandgap (EG) of ZrO2, which cannot be absorbed by the ZrO2 dielectric. From X-ray diffraction analysis, the large κ value and capacitance density are attributed the crystallinity of cubic phase ZrO2 that is improved with laser annealing and in turn improves the capacitance density. This technology is crucial for monolithic three-dimensional devices integration on the backend of advanced integrated circuit.

Source: Nanomaterials

DOI: 10.3390/nano15030246

Authors: Wei Ting Fan, Pheiroijam Pooja, Albert Chin

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,896

Funders: National Science and Technology Council, Shanghai Educational Development Foundation, National Science and Technology Council