Work

Ferroelectric Optoelectronic Memory Based on p-GaN/ZnGa2O4/BaTiO3/n-ITO Heterojunction with Integrated Sensing and Logic Operations

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c19505

Authors: Wushuang Han, Kewei Liu, Jialin Yang, Xiaoqian Huang, Yongxue Zhu, Xing Chen, Zhen Cheng, Dongyang Han, Binghui Li, Lei Liu, Dezhen Shen

Institutions: Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, University of Chinese Academy of Sciences, State Key Laboratory of Luminescence and Application

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences

Awards: G1255311416, G1264758561, G3152094076, G6129803706, G6184182387, G728005354

OpenAlex ID: W4407162409

FWCI: 0.231

Cites: 44

Cited by: 1

Related to: 10