Work

Impact of SiO2 Current Blocking Layer on Optical Characteristics of GaN‐Based Microdisk Laser Diodes

Year: 2025

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.202400978

Authors: Xiangyu Xu, Zhaoqiang Liu, Yonghui Zhang, Kangkai Tian, Chunshuang Chu, Xuecheng Wei, Zihui Zhang

Institutions: Hebei University of Technology, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Guangdong University of Technology, Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Innovative Research Group Project of the National Natural Science Foundation of China, Key Technologies Research and Development Program

Awards: G1301508338, G3587586839, G4091695920, G5790071864, G7696808731

OpenAlex ID: W4407182536

FWCI: 0.317

Cites: 16

Cited by: 1

Related to: 10