Work

Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3539353

Authors: Junjie Yang, Jingjing Yu, Jiawei Cui, Sihang Liu, Teng Li, Yunhong Lao, Hao Chang, Maojun Wang, Jinyan Wang, Xiaosen Liu, Jin Wei, Bo Shen

Institutions: Peking University, Tsinghua University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2774462745

OpenAlex ID: W4407212792

FWCI: 6.139

Cites: 29

Cited by: 19

Related to: 10