Work

Extremely Low Switching Current STT-MRAM Device With Double Spin Transfer Torque

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3539311

Authors: Sinan Zou, Xing Zhao, Yuan Xue, Jianfeng Gao, Yan Cui, Jun Luo

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Semiconductor Research Corporation, National Key Research and Development Program of China

Awards: G1755740909, G6140618976

OpenAlex ID: W4407212821

FWCI: 2.578

Cites: 31

Cited by: 7

Related to: 10