Work

A Flexible Low Dropout Regulator Based on InSnO Thin-Film Transistors With Superior Bending Robustness and Ultra-Low Quiescent Current

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3539285

Authors: Tingrui Huang, Zuoxu Yu, Yuzhen Zhang, Di Gui, Mingming Liu, Kaizhi Sui, Wenting Xu, Guangan Yang, Wangran Wu, Weifeng Sun

Institutions: Southeast University, Nanjing University of Posts and Telecommunications

Language: English

Topic: Analog and Mixed-Signal Circuit Design

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Fundamental Research Funds for the Central Universities

Awards: G1153075470, G5774613238

OpenAlex ID: W4407212892

FWCI: 0.723

Cites: 38

Cited by: 3

Related to: 10