Work

Forming-free, Uniform, and Multi-level Resistive Switching in W/AlOxNy/Al2O3/Pt Memristor by Nitrogen Annealing Strategy

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

DOI: 10.1109/icta64028.2024.10860375

Authors: Yi-Bai Xue, Sheng-Guang Ren, Yu Zhang, Wen-Bin Zuo, Yi Li, Xiang-Shui Miao

Institution: Huazhong University of Science and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Fundamental Research Funds for the Central Universities, Research and Development

OpenAlex ID: W4407213801

FWCI: 0.806

Cites: 8

Cited by: 1

Related to: 10