Invited Paper: Low-Temperature SiO2/SiO2 Wafer Direct Bonding by N2 Plasma Activation
Year: 2024
Type: conference-paper
Institution: Harbin Institute of Technology
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4407213807
