Work

A Rugged 1200V P-channel LDMOS in Bipolar-CMOS-DMOS Process with Global Potential Control Technology

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

DOI: 10.1109/icta64028.2024.10860628

Authors: Chengwu Pan, Shipeng Chang, Jingjing Hong, Nailong He, Jie Ma, Sen Zhang, Long Zhang, Siyang Liu, Weifeng Sun

Institution: Southeast University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4407215130

FWCI: 1.612

Cites: 4

Cited by: 2

Related to: 10