Work

Recent advances in GaN-based power devices and integration

Year: 2025

Type: article

Abstract: Gallium nitride (GaN) has gained traction in replacing silicon for power electronics applications, due to its high breakdown field, high mobility 2D electron gas, and effective n/p-type doping. This paper reviews three important topics of GaN power devices. One is the voltage-blocking structures needed to operate at high voltage while minimizing conduction loss and switching loss. Another one is the structure used to achieve normally-off operation, which is often required for power electronics. The third topic is the monolithic integration of gate drivers and power switches to achieve the ultimate switching speed at a low cost.

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/adb32d

Authors: Yixin Xiong, Mansura Sadek, Rongming Chu

Institution: Pennsylvania State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $3,325